利用铌酸锂的表面声波元件的潜在失效机制

D. Allen, B. Bertiger, W. Daily
{"title":"利用铌酸锂的表面声波元件的潜在失效机制","authors":"D. Allen, B. Bertiger, W. Daily","doi":"10.1109/IRPS.1980.362941","DOIUrl":null,"url":null,"abstract":"A latent failure mechanism for surface acoustic wave components which utilize lithium niobate as the piezoelectric has been, identified. This failure mechanism involves the growth of aluminum oxide on the thin film aluminum metal which constitutes the interdigitated electrical/mechanical transducer structure. This failure mechanism has been successfully eliminated in high-reliability components by making certain that a necessary condition for the growth of the oxide does not exist. The necessary condition is the existence of a dc electric field within the transducer structure. The exact conditions necessary for the initiation of the oxide growth have not, as yet, been determined. It is known that electric field values of the order of 104 volts per centimeter with ambient temperature of 125°C for 168 hours can cause the growth. The effect of the growth is to reduce the effective electroacoustical coupling factor which results in the component exhibiting added insertion loss and a skewing of pass band RF characteristics as the growth progresses.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"253 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Latent Failure Mechanism for Surface Acoustic Wave Components Utilizing Lithium Niobate\",\"authors\":\"D. Allen, B. Bertiger, W. Daily\",\"doi\":\"10.1109/IRPS.1980.362941\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A latent failure mechanism for surface acoustic wave components which utilize lithium niobate as the piezoelectric has been, identified. This failure mechanism involves the growth of aluminum oxide on the thin film aluminum metal which constitutes the interdigitated electrical/mechanical transducer structure. This failure mechanism has been successfully eliminated in high-reliability components by making certain that a necessary condition for the growth of the oxide does not exist. The necessary condition is the existence of a dc electric field within the transducer structure. The exact conditions necessary for the initiation of the oxide growth have not, as yet, been determined. It is known that electric field values of the order of 104 volts per centimeter with ambient temperature of 125°C for 168 hours can cause the growth. The effect of the growth is to reduce the effective electroacoustical coupling factor which results in the component exhibiting added insertion loss and a skewing of pass band RF characteristics as the growth progresses.\",\"PeriodicalId\":270567,\"journal\":{\"name\":\"18th International Reliability Physics Symposium\",\"volume\":\"253 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1980-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"18th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1980.362941\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"18th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1980.362941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

确定了以铌酸锂为压电材料的表面声波元件的潜在失效机制。这种失效机制涉及到氧化铝在铝金属薄膜上的生长,铝金属薄膜构成了交叉的电气/机械换能器结构。通过确保氧化物生长的必要条件不存在,在高可靠性元件中成功地消除了这种失效机制。必要条件是换能器结构内部存在直流电场。引起氧化物生长的确切条件还没有确定。已知在125℃的环境温度下,电场值为每厘米104伏,持续168小时可引起生长。生长的影响是降低有效的电声耦合因子,导致元件显示出增加的插入损耗和随着生长的进行通带射频特性的倾斜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A Latent Failure Mechanism for Surface Acoustic Wave Components Utilizing Lithium Niobate
A latent failure mechanism for surface acoustic wave components which utilize lithium niobate as the piezoelectric has been, identified. This failure mechanism involves the growth of aluminum oxide on the thin film aluminum metal which constitutes the interdigitated electrical/mechanical transducer structure. This failure mechanism has been successfully eliminated in high-reliability components by making certain that a necessary condition for the growth of the oxide does not exist. The necessary condition is the existence of a dc electric field within the transducer structure. The exact conditions necessary for the initiation of the oxide growth have not, as yet, been determined. It is known that electric field values of the order of 104 volts per centimeter with ambient temperature of 125°C for 168 hours can cause the growth. The effect of the growth is to reduce the effective electroacoustical coupling factor which results in the component exhibiting added insertion loss and a skewing of pass band RF characteristics as the growth progresses.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Electromigration Resistance of Fine-Line Al for VLSI Applications Effects of Silicon Nitride Encapsulation on MOS Device Stability Reliability Analysis of Several Conductors at High Current Densities for use in Bubble Memories Reliability Testing and Evaluation of Magnetic Bubble Memories for Electronic Switching Systems Electromigration Failure in Hieavily Doped Polycrystalline Silicon
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1