通过 MOCVD 在 Ge 基底上沉积的 HfO/sub 2/ 的物理特性

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI:10.1109/ISDRS.2003.1271981

S. Van Elshocht, B. Brijs, M. Caymax, T. Conard, S. De Gendt, S. Kubicek, M. Meuris, B. Onsia, O. Richard, I. Teerlinck, J. Van Steenbergen, C. Zhao, M. Heyns

{"title":"通过 MOCVD 在 Ge 基底上沉积的 HfO/sub 2/ 的物理特性","authors":"S. Van Elshocht, B. Brijs, M. Caymax, T. Conard, S. De Gendt, S. Kubicek, M. Meuris, B. Onsia, O. Richard, I. Teerlinck, J. Van Steenbergen, C. Zhao, M. Heyns","doi":"10.1109/ISDRS.2003.1271981","DOIUrl":null,"url":null,"abstract":"In this paper, we study the growth properties of HfO/sub 2/ on Ge by MOCVD, using TDEAH and O/sub 2/ precursors and compare the results to similar layers deposited on silicon substrates. Analysis techniques include ellipsometry, Rutherford Backscattering Spectra (RBS), transmission electron microscopy (TEM),X-ray diffraction (XRD), and time of flight secondary ion mass spectroscopy (TOFSIMS).","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Physical characterization of HfO/sub 2/ deposited on Ge substrates by MOCVD\",\"authors\":\"S. Van Elshocht, B. Brijs, M. Caymax, T. Conard, S. De Gendt, S. Kubicek, M. Meuris, B. Onsia, O. Richard, I. Teerlinck, J. Van Steenbergen, C. Zhao, M. Heyns\",\"doi\":\"10.1109/ISDRS.2003.1271981\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we study the growth properties of HfO/sub 2/ on Ge by MOCVD, using TDEAH and O/sub 2/ precursors and compare the results to similar layers deposited on silicon substrates. Analysis techniques include ellipsometry, Rutherford Backscattering Spectra (RBS), transmission electron microscopy (TEM),X-ray diffraction (XRD), and time of flight secondary ion mass spectroscopy (TOFSIMS).\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1271981\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1271981","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在本文中，我们使用 TDEAH 和 O/sub 2/ 前驱体，通过 MOCVD 技术研究了 HfO/sub 2/ 在 Ge 上的生长特性，并将结果与沉积在硅衬底上的类似层进行了比较。分析技术包括椭偏仪、卢瑟福背散射光谱 (RBS)、透射电子显微镜 (TEM)、X 射线衍射 (XRD) 和飞行时间二次离子质谱 (TOFSIMS)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Physical characterization of HfO/sub 2/ deposited on Ge substrates by MOCVD

In this paper, we study the growth properties of HfO/sub 2/ on Ge by MOCVD, using TDEAH and O/sub 2/ precursors and compare the results to similar layers deposited on silicon substrates. Analysis techniques include ellipsometry, Rutherford Backscattering Spectra (RBS), transmission electron microscopy (TEM),X-ray diffraction (XRD), and time of flight secondary ion mass spectroscopy (TOFSIMS).

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International Semiconductor Device Research Symposium, 2003

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