Effect of Substrate Temperature on Te-doping Concentration in GaSb Matrix using GaTe Dopant Source in Molecular Beam Epitaxy

GaTe has been used as an n-type dopant source in molecular beam epitaxy (MBE) to grow antimony-based materials. This research is the first to systematically investigate the substrate temperature and III-V flux ratio effects on Te-doping in GaSb matrix. We find that the growth temperature has a great times difference on Te concentration, while the V-III flux ratio does not. The Sb-based high-electron-mobility transistor (HEMT) with intrinsic InAs as the channel layer is grown and processed. Hall measurement gives reasonable electron mobility and sheet concentration at room temperature. Our experimental results show the feasibility of using GaTe as the n-type dopant source for MBE-grown InAs/Al(Ga)Sb HEMT devices.