太赫兹InP双极晶体管电路集成与应用

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2017-10-01 DOI:10.1109/CSICS.2017.8240463

M. Urteaga, Z. Griffith, R. Pierson, P. Rowell, A. Young, J. Hacker, B. Brar, S.K. Kim, R. Maurer, M. Rodwell

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引用次数: 13

摘要

高尺度磷化铟(InP)晶体管技术的带宽扩展到太赫兹(THz)频率范围(0.3-3太赫兹)。高晶体管带宽可用于将电路工作扩展到太赫兹频率，并改善毫米波和亚毫米波频率下的系统性能。InP异质结双极晶体管(HBT)技术提供宽带、高射频功率处理和实现高水平集成的能力。我们回顾了Teledyne的InP HBT技术的集成电路(IC)成果，这些技术的频率从60 GHz到600 GHz，重点是性能优势和应用。

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THz InP bipolar transistors-circuit integration and applications

Highly-scaled Indium Phosphide (InP) transistor technologies have bandwidths extending into the terahertz (THz) frequency regime (0.3–3 THz). The high transistor bandwidth can be exploited to both extend circuit operation to THz frequencies and improve system performance at millimeter wave and sub-millimeter wave frequencies. InP heterojunction bipolar transistor (HBT) technologies offer wide bandwidths, high RF power handling and the capability to realize high levels of integration. We review integrated circuit (IC) results from Teledyne's InP HBT technologies that span frequencies from 60 GHz to >600 GHz focusing on performance benefits and applications.

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2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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