28纳米0.08 mm2/Mb嵌入式MRAM帧缓冲存储器

2020 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2020-12-12 DOI:10.1109/IEDM13553.2020.9372040

S. H. Han, J. Lee, H. Shin, J. Lee, K. Suh, K. Nam, B. Kwon, M. Cho, J. Lee, J. Jeong, J. Park, S. C. Oh, S. O. Park, S. Hwang, S. Pyo, H. Jung, Y. Ji, J. Bak, D. S. Kim, W. S. Ham, Y. Kim, K. Lee, Y. J. Song, G. Koh, Y. Hong, G. Jeong

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引用次数: 12

摘要

我们展示了世界上第一个用于帧缓冲存储器的28纳米嵌入式MRAM (eMRAM)演示，突出了迄今为止报道的最小宏尺寸(0.08 mm2/Mb)。与通常用于帧缓冲存储器的SRAM相比，eMRAM可以节省47%的面积。对于帧缓冲应用，读取干扰和持久性是最关键的可靠性考虑因素。随着磁隧道结工艺的改进，我们已经验证了足够的读取干扰裕度，并满足了耐久性要求(> 1E10次循环)，相当于连续使用10年。与闪存型eMRAM相比，我们以< 50ns的读写速度实现了40%的开关电流降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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28-nm 0.08 mm2/Mb Embedded MRAM for Frame Buffer Memory

We present the world-first demonstration of 28-nm embedded MRAM (eMRAM) for frame buffer memory, highlighting the smallest macro size (0.08 mm2/Mb) reported to date. Compared to SRAM that is commonly used for frame buffer memory, eMRAM provides 47% area saving. For frame buffer applications, read disturbance and endurance are the most critical reliability considerations. With magnetic tunnel junction process improvements, we have verified sufficient read disturbance margins and met the endurance requirement (> 1E10 cycles) which corresponds to 10-year continuous usage. Compared to flash-type eMRAM, we have achieved 40% switching current reduction with < 50ns read/write speed.

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2020 IEEE International Electron Devices Meeting (IEDM)

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