S. Maikap, S. Z. Rahaman, W. Banerjee, C. Lin, P. Tzeng, C. Wang, M. Kao, M. Tsai
{"title":"利用ALD TiN/Al2O3纳米层状电荷存储层增强闪存器件特性","authors":"S. Maikap, S. Z. Rahaman, W. Banerjee, C. Lin, P. Tzeng, C. Wang, M. Kao, M. Tsai","doi":"10.1109/ICSICT.2008.4734702","DOIUrl":null,"url":null,"abstract":"Enhanced flash memory device characteristics using ALD TiN/Al<sub>2</sub>O<sub>3</sub> nanolaminate charge storage layers have been investigated. After annealing treatment, the TiN nanocrystals embedded in Al<sub>2</sub>O<sub>3</sub> films with a small diameter of ~3 nm and a high-density of >1×10<sup>12</sup>/cm<sup>2</sup> have been formed. The memory devices show a high programming speed of ¿V<sub>t</sub> >1 V@V<sub>g</sub>/V<sub>d</sub>=8 V/8 V, 10 ¿s and an erasing speed of ¿V<sub>t</sub> >1 V@V<sub>g</sub>/V<sub>d</sub>=-12 V/0 V, 1 ms. The memory window is increased (¿V<sub>t</sub> >6.7 V) with increasing the operation voltage. The memory window is also increased with increasing the number of TiN/Al<sub>2</sub>O<sub>3</sub> nanolaminate layers. Good endurance (10<sup>4</sup> cycles) and retention (charge loss of ~14% at 20°C and ~17% at 85°C after 10 years) characteristics of the TiN nanocrystal memory devices can be explained by both of the high-density and layer-by-layer charge storage in the TiN nanocrystals. This novel nanocrystal memory structure can be useful in future nanoscale flash memory device applications.","PeriodicalId":436457,"journal":{"name":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","volume":"32 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced flash memory device characteristics using ALD TiN/Al2O3 nanolaminate charge storage layers\",\"authors\":\"S. Maikap, S. Z. Rahaman, W. Banerjee, C. Lin, P. Tzeng, C. Wang, M. Kao, M. Tsai\",\"doi\":\"10.1109/ICSICT.2008.4734702\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Enhanced flash memory device characteristics using ALD TiN/Al<sub>2</sub>O<sub>3</sub> nanolaminate charge storage layers have been investigated. After annealing treatment, the TiN nanocrystals embedded in Al<sub>2</sub>O<sub>3</sub> films with a small diameter of ~3 nm and a high-density of >1×10<sup>12</sup>/cm<sup>2</sup> have been formed. The memory devices show a high programming speed of ¿V<sub>t</sub> >1 V@V<sub>g</sub>/V<sub>d</sub>=8 V/8 V, 10 ¿s and an erasing speed of ¿V<sub>t</sub> >1 V@V<sub>g</sub>/V<sub>d</sub>=-12 V/0 V, 1 ms. The memory window is increased (¿V<sub>t</sub> >6.7 V) with increasing the operation voltage. The memory window is also increased with increasing the number of TiN/Al<sub>2</sub>O<sub>3</sub> nanolaminate layers. Good endurance (10<sup>4</sup> cycles) and retention (charge loss of ~14% at 20°C and ~17% at 85°C after 10 years) characteristics of the TiN nanocrystal memory devices can be explained by both of the high-density and layer-by-layer charge storage in the TiN nanocrystals. This novel nanocrystal memory structure can be useful in future nanoscale flash memory device applications.\",\"PeriodicalId\":436457,\"journal\":{\"name\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"volume\":\"32 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2008.4734702\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2008.4734702","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Enhanced flash memory device characteristics using ALD TiN/Al2O3 nanolaminate charge storage layers have been investigated. After annealing treatment, the TiN nanocrystals embedded in Al2O3 films with a small diameter of ~3 nm and a high-density of >1×1012/cm2 have been formed. The memory devices show a high programming speed of ¿Vt >1 V@Vg/Vd=8 V/8 V, 10 ¿s and an erasing speed of ¿Vt >1 V@Vg/Vd=-12 V/0 V, 1 ms. The memory window is increased (¿Vt >6.7 V) with increasing the operation voltage. The memory window is also increased with increasing the number of TiN/Al2O3 nanolaminate layers. Good endurance (104 cycles) and retention (charge loss of ~14% at 20°C and ~17% at 85°C after 10 years) characteristics of the TiN nanocrystal memory devices can be explained by both of the high-density and layer-by-layer charge storage in the TiN nanocrystals. This novel nanocrystal memory structure can be useful in future nanoscale flash memory device applications.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
