一种具有降低1/f噪声上转换的19.5 GHz 28 nm CMOS c类压控振荡器

ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC) Pub Date : 2019-09-01 DOI:10.1109/ESSCIRC.2019.8902813

Alessandro Franceschin, P. Andreani, F. Padovan, M. Bassi, R. Nonis, A. Bevilacqua

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引用次数: 5

摘要

利用c类操作来实现k波段CMOS压控振荡器，其中来自核心晶体管的1/f噪声的上转换被稳健地包含在最低水平。VCO采用批量28纳米CMOS技术实现，在19.5 GHz载波上，在1 MHz偏移时相位噪声低至-108.5 dBc/Hz(在100 kHz偏移时为-83 dBc/Hz)，功耗为14.4 mW，调谐范围为12%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 19.5 GHz 28 nm CMOS Class-C VCO with Reduced 1/f Noise Upconversion

Class-C operation is leveraged to implement a K-band CMOS VCO where the upconversion of the 1/f noise from the core transistors is robustly contained at a minimal level. Implemented in a bulk 28 nm CMOS technology, the VCO shows a phase noise as low as -108.5 dBc/Hz at 1 MHz offset (-83 dBc/Hz at 100 kHz offset) from the 19.5 GHz carrier, while consuming 14.4 mW and featuring a 12% tuning range.

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ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)

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