模板辅助下铟酸钠在W上的选择性外延

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/csw55288.2022.9930423

J. Svensson, P. Olausson, H. Menon, E. Lind, M. Borg

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引用次数: 0

摘要

介绍了模板辅助选择性外延技术在W薄膜上集成InAs的研究结果。利用扫描电镜、电子束后向散射和原位电测量对InAs晶体进行了分析。对于特定直径和节距的模板，可以获得高产量的单晶InAs，这表明这是将III-V半导体集成到CMOS电路后端以增加功能的可行途径。

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Template-Assisted Selective Epitaxy of InAs on W

Results on integration of InAs on W films through template assisted selective epitaxy are presented. The InAs crystals are analysed using SEM, electron beam backscattering and in-situ electrical measurements. A high yield of single crystalline InAs can be obtained for certain template diameters and pitches which demonstrates that this is a viable route to integrate III-V semiconductors in the back-end-of-line of CMOS circuits for added functionality.

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2022 Compound Semiconductor Week (CSW)

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