{"title":"基于砷化镓的宽带0.25微米离子植入MMIC低噪声放大器","authors":"J. Sanctuary, C. Woodin, J. Manning","doi":"10.1109/MCS.1992.185988","DOIUrl":null,"url":null,"abstract":"A highly manufacturable 0.25- mu m ion-implant-process has been used for the development of monolithic microwave integrated circuit low-noise amplifiers (MMIC LNAs) covering the 2-18-GHz band. Noise figures of less than 2.5 dB and 3.0 dB have been achieved with MMICs covering the 2-6-GHz and 6-18-GHz bands, respectively. Insertion gains were 16 dB for the 2-6-GHz design and 10 dB for the 6-18-GHz design. This performance is comparable to that reported for high-electron-mobility-transistor (HEMT) processes.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Broadband 0.25 micron ion-implant MMIC low noise amplifiers on GaAs\",\"authors\":\"J. Sanctuary, C. Woodin, J. Manning\",\"doi\":\"10.1109/MCS.1992.185988\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A highly manufacturable 0.25- mu m ion-implant-process has been used for the development of monolithic microwave integrated circuit low-noise amplifiers (MMIC LNAs) covering the 2-18-GHz band. Noise figures of less than 2.5 dB and 3.0 dB have been achieved with MMICs covering the 2-6-GHz and 6-18-GHz bands, respectively. Insertion gains were 16 dB for the 2-6-GHz design and 10 dB for the 6-18-GHz design. This performance is comparable to that reported for high-electron-mobility-transistor (HEMT) processes.<<ETX>>\",\"PeriodicalId\":336288,\"journal\":{\"name\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1992.185988\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.185988","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Broadband 0.25 micron ion-implant MMIC low noise amplifiers on GaAs
A highly manufacturable 0.25- mu m ion-implant-process has been used for the development of monolithic microwave integrated circuit low-noise amplifiers (MMIC LNAs) covering the 2-18-GHz band. Noise figures of less than 2.5 dB and 3.0 dB have been achieved with MMICs covering the 2-6-GHz and 6-18-GHz bands, respectively. Insertion gains were 16 dB for the 2-6-GHz design and 10 dB for the 6-18-GHz design. This performance is comparable to that reported for high-electron-mobility-transistor (HEMT) processes.<>
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