二氧化硅薄膜中硅纳米晶体位置和尺寸控制的光合作用

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI:10.1109/NANOEL.2006.1609731

C. Chen, S. Kimura, S. Sen, S. Nozaki, H. Ono, K. Uchida, H. Morisaki

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引用次数: 0

摘要

纳米二氧化硅纳米颗粒(~40,gm)对激光辐照表现出强烈的反应。硅纳米晶体的光合作用受激光功率和曝光时间的限制。此外，激光辐照SiOxfilm不仅产生Si NC，而且使SiOxfilm从粉末状转变为连续状。与传统的合成方法相比，Si NC的光合作用具有低温过程、尺寸和定位控制好等优点，具有广阔的应用前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Position and Size-Controlled Photosynthesis of Silicon Nanocrystals in SiO2Films

The SiOxthin film made of the SiOxnanoparticles (~40, gm) shows a strong reaction to laser irradiation. The photosynthesis of silicon (Si) nanocrystals (NC's) is found to be self-limited to the laser power and exposure time. Furthermore, the laser irradiation of the SiOxfilm not only produces Si NC's, also transforms the SiOxfilm from the powder-like to the continuous. The photosynthesis of Si NC's has several advantages such as low-temperature process and good control in the size and positioning over the conventional synthesis methods and has many potential applications.

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2006 IEEE Conference on Emerging Technologies - Nanoelectronics

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