离子注入砷化镓的非线性光学性质

M.J. Lodeer, B. Luther-Davies, H. Tan, C. Jagadish, M. Haimi, U. Siegner, U. Keller, J. Zou
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引用次数: 0

摘要

我们报道了砷和氧注入GaAs在不同剂量和退火条件下的响应时间和非线性光学吸收调制的综合研究。o型注入可以实现400 fs的响应时间,同时保持未注入GaAs调制深度的80%。发现调制与恢复时间之间存在关系,这也标志着最佳性能,并且与注入离子种类无关。然而,当剂量大到足以引起非晶化时,这种关系就不可逆转地破裂了。
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Nonlinear optical properties of ion-implanted GaAs
We report a comprehensive study of the response times and nonlinear optical absorption modulation of Arsenic and Oxygen implanted GaAs for various doses and annealing conditions. Response times of 400 fs could be achieved with O-implantation whilst preserving 80% of the modulation depth of unimplanted GaAs. It was found that a relationship exists between modulation and recovery time which also marks the best possible performance, and which is independent of the implanted ion species. However, for doses large enough to cause amorphization this relationship is irreversibly broken.
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