K. Johnson, A. Lum, S. Nelson, E. Reese, K. Salzman
{"title":"高效率宽带功率放大器MMIC","authors":"K. Johnson, A. Lum, S. Nelson, E. Reese, K. Salzman","doi":"10.1109/MCS.1992.185993","DOIUrl":null,"url":null,"abstract":"A GaAs broadband, dual-channel, high-efficiency power amplifier monolithic microwave integrated circuit (MMIC) is presented. The average performance for a single channel of the power amplifier was 18.0-dB small-signal gain, 16% power-added efficiency, and 2-dB compressed output power of 29.4 dBm from 6 to 18 GHz at 25 degrees C. The two channels combined off chip achieved 32-dBm average output power. This 0.5- mu m ion-implanted MESFET amplifier MMIC has been demonstrated in volume production with 154 wafer starts over three months, resulting in a 30% total yield through fixtured RF test.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"High efficiency broadband power amplifier MMIC\",\"authors\":\"K. Johnson, A. Lum, S. Nelson, E. Reese, K. Salzman\",\"doi\":\"10.1109/MCS.1992.185993\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A GaAs broadband, dual-channel, high-efficiency power amplifier monolithic microwave integrated circuit (MMIC) is presented. The average performance for a single channel of the power amplifier was 18.0-dB small-signal gain, 16% power-added efficiency, and 2-dB compressed output power of 29.4 dBm from 6 to 18 GHz at 25 degrees C. The two channels combined off chip achieved 32-dBm average output power. This 0.5- mu m ion-implanted MESFET amplifier MMIC has been demonstrated in volume production with 154 wafer starts over three months, resulting in a 30% total yield through fixtured RF test.<<ETX>>\",\"PeriodicalId\":336288,\"journal\":{\"name\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1992.185993\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.185993","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A GaAs broadband, dual-channel, high-efficiency power amplifier monolithic microwave integrated circuit (MMIC) is presented. The average performance for a single channel of the power amplifier was 18.0-dB small-signal gain, 16% power-added efficiency, and 2-dB compressed output power of 29.4 dBm from 6 to 18 GHz at 25 degrees C. The two channels combined off chip achieved 32-dBm average output power. This 0.5- mu m ion-implanted MESFET amplifier MMIC has been demonstrated in volume production with 154 wafer starts over three months, resulting in a 30% total yield through fixtured RF test.<>
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