化学机械抛光过程的三维仿真建模

1997 Symposium on VLSI Technology Pub Date : 1997-06-10 DOI:10.1109/VLSIT.1997.623677

Takahashi, Tokunaga, Kasuga, Suzuki

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引用次数: 5

摘要

提出了一种新的化学机械抛光(CMP)平面化模型。实际计算的机器时间可估计小于有限元法的U100，仿真与实验结果吻合良好。该模型提供了CMP过程中三维表面轮廓的平面化物理图像。此外，还可以估计出优化的LSI芯片布局或适当的处理条件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling Of Chemical Mechanical Polishing Process For Three-dimensional Simulation

A new model of chemical mechanical polishing (CMP) planarization is proposed. Machine time for actual calculation can be estimated less than U100 of Finite Element Method and the simulation is in excellent agreement with experimental results. This model provides a physical image of planarization for three-dimensional surface profile during CMP. Furthermore an optimized LSI chip layout or an appropriate processing condition can be estimated.

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1997 Symposium on VLSI Technology

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