高性能InGaAsP光放大器及多量子阱器件研究进展

International Conference on Indium Phosphide and Related Materials Pub Date : 1990-04-23 DOI:10.1109/ICIPRM.1990.203050

W. Devlin, D. M. Cooper, P. C. Spurdens, G. Sherlock, M. Bagley, J. C. Regnault, D. Elton

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摘要

综述了降低半导体光放大器偏振灵敏度和抑制表面反射率的技术。讨论了1.3 μ m和1.5 μ m放大器的结果。多量子阱(MQW)器件的优势通过增强调谐范围的外腔器件和高饱和输出功率、快速增益恢复放大器得到了证明

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Recent progress in high performance InGaAsP optical amplifiers and multiple quantum well devices

Techniques for reducing the polarization sensitivity and suppressing the facet reflectivity of semiconductor optical amplifiers are reviewed. Results for 1.3- and 1.5- mu m amplifiers are discussed. The benefits of multiple-quantum-well (MQW) devices are demonstrated by enhanced tuning range external cavity devices and by high-saturated-output-power, fast-gain-recovery amplifiers.<>

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International Conference on Indium Phosphide and Related Materials

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