{"title":"采用低成本复模塑料封装的宽带大功率SPDT和SP3T GaN MMIC开关","authors":"Tuong Nguyen, V. Zomorrodian, Thi Ri Mya Kywe","doi":"10.1109/CSICS.2017.8240452","DOIUrl":null,"url":null,"abstract":"The design and measured performance of wideband, high power GaN SPDT and SP3T MMIC switches in low-cost overmolded plastic package is presented. The switches operate in the 0.15–2.8 GHz band with class-leading CW input power handling of 50W, low insertion loss and excellent isolation. The reflective switches employ a series/shunt circuit architecture, fully integrated input and output matching using on-chip spiral inductors and complementary logic control. Accurate linear and non-linear modeling of the switch FETs is integral to the circuit design process and is discussed in some detail.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Wideband high power SPDT and SP3T GaN MMIC switches in low-cost overmolded plastic package\",\"authors\":\"Tuong Nguyen, V. Zomorrodian, Thi Ri Mya Kywe\",\"doi\":\"10.1109/CSICS.2017.8240452\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and measured performance of wideband, high power GaN SPDT and SP3T MMIC switches in low-cost overmolded plastic package is presented. The switches operate in the 0.15–2.8 GHz band with class-leading CW input power handling of 50W, low insertion loss and excellent isolation. The reflective switches employ a series/shunt circuit architecture, fully integrated input and output matching using on-chip spiral inductors and complementary logic control. Accurate linear and non-linear modeling of the switch FETs is integral to the circuit design process and is discussed in some detail.\",\"PeriodicalId\":129729,\"journal\":{\"name\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2017.8240452\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2017.8240452","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wideband high power SPDT and SP3T GaN MMIC switches in low-cost overmolded plastic package
The design and measured performance of wideband, high power GaN SPDT and SP3T MMIC switches in low-cost overmolded plastic package is presented. The switches operate in the 0.15–2.8 GHz band with class-leading CW input power handling of 50W, low insertion loss and excellent isolation. The reflective switches employ a series/shunt circuit architecture, fully integrated input and output matching using on-chip spiral inductors and complementary logic control. Accurate linear and non-linear modeling of the switch FETs is integral to the circuit design process and is discussed in some detail.
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