热Ta/sub 2/O/sub 5/ -可替代SiO/sub 2/用于高密度动态存储器

E. Atanassova, D. Spassov
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引用次数: 0

摘要

研究了射频溅射Ta薄膜在Si上热氧化得到的五氧化二钽薄层(10-100 nm)的介电、结构和电学性能。确定了在层表面检测到的化学计量量Ta/sub 2/O/sub 5/在其深度上被还原为亚氧化钽。在Si和Ta/sub 2/O/sub 5/之间不可避免地存在超薄SiO/sub 2/,并且在氧化物和界面过渡区都存在键缺陷。建立了在1.5 V (SiO/ sub2 /等效厚度为2.5 ~ 3nm)条件下,保证获得介电常数为32 ~ 35,漏电流小于10/sup -7/ - 10/sup -8/ a /cm/sup 2/的优质氧化钽的条件。这些规格使得该层获得了适合高密度dram应用的SiO/sub 2/替代品。
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Thermal Ta/sub 2/O/sub 5/ - alternative to SiO/sub 2/ for high density dynamic memories
Tantalum pentoxide thin layers (10-100 nm) obtained by thermal oxidation of rf sputtered Ta films on Si have been investigated with respect to their dielectric, structural and electrical properties. It is established that stoichiometric Ta/sub 2/O/sub 5/ detected at the surface of the layers is reduced to tantalum suboxides in their depth. The oxide parameters are discussed in terms of a presence of an unavoidable ultrathin SiO/sub 2/ between Si and Ta/sub 2/O/sub 5/ and bond defects in both the oxide and the interface transition region. Conditions which guarantee obtaining high quality tantalum oxide with a dielectric constant of 32 - 35 and a leakage current less than 10/sup -7/ - 10/sup -8/ A/cm/sup 2/ at 1.5 V (SiO/sub 2/ equivalent thickness of 2.5 - 3 nm) are established. These specifications make the layers obtained suitable alternative to SiO/sub 2/ for high density DRAMs application.
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