{"title":"一个完全充电，bicmos兼容，高压MOS晶体管","authors":"Min Liu, C. Salama, P. Schvan, M. King","doi":"10.1109/ISPSD.1996.509467","DOIUrl":null,"url":null,"abstract":"In this paper a fully resurfed, high voltage MOS structure compatible with submicron BiCMOS technology is proposed and implemented. The device is junction-isolated and is therefore suitable for high-side drive applications. Using this structure, the resurf condition in the device can be optimized without altering the well regions. Devices with breakdown voltages over 200 V and specific on-resistances on the order of 20 m/spl Omega//spl middot/cm/sup 2/ were obtained.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A fully resurfed, BiCMOS-compatible, high voltage MOS transistor\",\"authors\":\"Min Liu, C. Salama, P. Schvan, M. King\",\"doi\":\"10.1109/ISPSD.1996.509467\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a fully resurfed, high voltage MOS structure compatible with submicron BiCMOS technology is proposed and implemented. The device is junction-isolated and is therefore suitable for high-side drive applications. Using this structure, the resurf condition in the device can be optimized without altering the well regions. Devices with breakdown voltages over 200 V and specific on-resistances on the order of 20 m/spl Omega//spl middot/cm/sup 2/ were obtained.\",\"PeriodicalId\":377997,\"journal\":{\"name\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"volume\":\"68 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1996.509467\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509467","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A fully resurfed, BiCMOS-compatible, high voltage MOS transistor
In this paper a fully resurfed, high voltage MOS structure compatible with submicron BiCMOS technology is proposed and implemented. The device is junction-isolated and is therefore suitable for high-side drive applications. Using this structure, the resurf condition in the device can be optimized without altering the well regions. Devices with breakdown voltages over 200 V and specific on-resistances on the order of 20 m/spl Omega//spl middot/cm/sup 2/ were obtained.
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