Y. Wada, I. Noji, I. Kobata, T. Kohama, A. Fukunaga, M. Tsujimura
{"title":"铜/低钾平化技术的使能方案","authors":"Y. Wada, I. Noji, I. Kobata, T. Kohama, A. Fukunaga, M. Tsujimura","doi":"10.1109/IITC.2005.1499951","DOIUrl":null,"url":null,"abstract":"The electro-chemical polishing in DI water (\"ECP-DI\" technology) and the advanced CMP technology (\"mC/sup 2/\") are introduced, as a new noble low down-force planarization technology. Each process is developed for the Cu bulk polishing step of Cu/ultra low-k devices. The ECP-DI is governed by Faraday's law, and that principle involves 'di-plating' of only the part coming into contact with the ion exchange film. Advanced CMP is a process which is not governed by Preston's law, but by the dissolution law.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"The enabling solution of Cu/low-k planarization technology\",\"authors\":\"Y. Wada, I. Noji, I. Kobata, T. Kohama, A. Fukunaga, M. Tsujimura\",\"doi\":\"10.1109/IITC.2005.1499951\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electro-chemical polishing in DI water (\\\"ECP-DI\\\" technology) and the advanced CMP technology (\\\"mC/sup 2/\\\") are introduced, as a new noble low down-force planarization technology. Each process is developed for the Cu bulk polishing step of Cu/ultra low-k devices. The ECP-DI is governed by Faraday's law, and that principle involves 'di-plating' of only the part coming into contact with the ion exchange film. Advanced CMP is a process which is not governed by Preston's law, but by the dissolution law.\",\"PeriodicalId\":156268,\"journal\":{\"name\":\"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2005.1499951\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2005.1499951","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The enabling solution of Cu/low-k planarization technology
The electro-chemical polishing in DI water ("ECP-DI" technology) and the advanced CMP technology ("mC/sup 2/") are introduced, as a new noble low down-force planarization technology. Each process is developed for the Cu bulk polishing step of Cu/ultra low-k devices. The ECP-DI is governed by Faraday's law, and that principle involves 'di-plating' of only the part coming into contact with the ion exchange film. Advanced CMP is a process which is not governed by Preston's law, but by the dissolution law.
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