{"title":"基于全解析模型的轻掺杂肖特基势垒dg - mosfet源极/漏极载流子隧穿二维分析","authors":"M. Schwarz, T. Holtij, A. Kloes, B. Iñíguez","doi":"10.1109/ULIS.2011.5758014","DOIUrl":null,"url":null,"abstract":"A new approach to estimate the tunneling current in SB-DG-MOSFETs by applying 2D analytical solutions for the electric field and the electrostatic potential is used to analyze the current contribution. Here, the main focus on the tunneling current. 2D analysis shows a two dimensional influence on the tunneling current, which tunneling probabilty is estimated with the Wentzel-Kramers-Brillouin (WKB) approximation. Thermionic emission is calculated as well with the 2D analytical solutions. A comparison of the tunneling and thermionic current with TCAD Sentaurus was made for channel lengths down to 65nm.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"2D Analysis of source/drain carrier tunneling in lightly doped Schottky barrier DG-MOSFETs using a fully analytical model\",\"authors\":\"M. Schwarz, T. Holtij, A. Kloes, B. Iñíguez\",\"doi\":\"10.1109/ULIS.2011.5758014\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new approach to estimate the tunneling current in SB-DG-MOSFETs by applying 2D analytical solutions for the electric field and the electrostatic potential is used to analyze the current contribution. Here, the main focus on the tunneling current. 2D analysis shows a two dimensional influence on the tunneling current, which tunneling probabilty is estimated with the Wentzel-Kramers-Brillouin (WKB) approximation. Thermionic emission is calculated as well with the 2D analytical solutions. A comparison of the tunneling and thermionic current with TCAD Sentaurus was made for channel lengths down to 65nm.\",\"PeriodicalId\":146779,\"journal\":{\"name\":\"Ulis 2011 Ultimate Integration on Silicon\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ulis 2011 Ultimate Integration on Silicon\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULIS.2011.5758014\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ulis 2011 Ultimate Integration on Silicon","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2011.5758014","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
2D Analysis of source/drain carrier tunneling in lightly doped Schottky barrier DG-MOSFETs using a fully analytical model
A new approach to estimate the tunneling current in SB-DG-MOSFETs by applying 2D analytical solutions for the electric field and the electrostatic potential is used to analyze the current contribution. Here, the main focus on the tunneling current. 2D analysis shows a two dimensional influence on the tunneling current, which tunneling probabilty is estimated with the Wentzel-Kramers-Brillouin (WKB) approximation. Thermionic emission is calculated as well with the 2D analytical solutions. A comparison of the tunneling and thermionic current with TCAD Sentaurus was made for channel lengths down to 65nm.
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