块硅和SOI技术中ESD二极管的电热建模

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476) Pub Date : 2000-09-26 DOI:10.1109/EOSESD.2000.890112

Yu Wang, P. Juliano, S. Joshi, E. Rosenbaum

{"title":"块硅和SOI技术中ESD二极管的电热建模","authors":"Yu Wang, P. Juliano, S. Joshi, E. Rosenbaum","doi":"10.1109/EOSESD.2000.890112","DOIUrl":null,"url":null,"abstract":"An electrothermal diode model intended for implementation in a SPICE-like simulator is presented. The model is valid in the high current, forward-bias and reverse-breakdown regimes where diodes operate during ESD events. We also present a procedure for extracting the temperature of an SOI diode from an I-V measurement.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Electrothermal modeling of ESD diodes in bulk-Si and SOI technologies\",\"authors\":\"Yu Wang, P. Juliano, S. Joshi, E. Rosenbaum\",\"doi\":\"10.1109/EOSESD.2000.890112\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An electrothermal diode model intended for implementation in a SPICE-like simulator is presented. The model is valid in the high current, forward-bias and reverse-breakdown regimes where diodes operate during ESD events. We also present a procedure for extracting the temperature of an SOI diode from an I-V measurement.\",\"PeriodicalId\":332394,\"journal\":{\"name\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EOSESD.2000.890112\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2000.890112","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 14

摘要

提出了一种在类似spice的模拟器中实现的电热二极管模型。该模型适用于ESD事件中二极管工作的大电流、正偏置和反向击穿情况。我们还提出了从I-V测量中提取SOI二极管温度的程序。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrothermal modeling of ESD diodes in bulk-Si and SOI technologies

An electrothermal diode model intended for implementation in a SPICE-like simulator is presented. The model is valid in the high current, forward-bias and reverse-breakdown regimes where diodes operate during ESD events. We also present a procedure for extracting the temperature of an SOI diode from an I-V measurement.

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Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)

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