Liangxing Hu, Y. Lim, P. Zhao, Michael Joo Zhong Lim, Chuan Seng Tan
{"title":"两步Ar/N2等离子体活化铝表面的Al-Al直接键合","authors":"Liangxing Hu, Y. Lim, P. Zhao, Michael Joo Zhong Lim, Chuan Seng Tan","doi":"10.1109/ectc51906.2022.00060","DOIUrl":null,"url":null,"abstract":"In this study, two-step argon/nitrogen plasma-activated aluminum surface for aluminum-aluminum direct bonding is reported. Surfaces from the as-deposited and the argon/nitrogen plasma-activated aluminum are characterized for hydrophilicity and surface chemical states. The results demonstrate that the plasma-activated aluminum surface has smaller water contact angle at 8° (i.e. more hydrophilic) and a thin layer of aluminum nitride. Moreover, the bonded plasma-activated dies, annealed at 300°C under 2000 mBar, have an impressive mechanical bonding strength of ~32 MPa with superior bonding quality. This plasma-activated bonding process is fast (10 s), requires low bonding force (50 N) and can be carried out in cleanroom environment, indicating its full promise for high-throughput heterogeneous integration and advanced packaging.","PeriodicalId":139520,"journal":{"name":"2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Two-Step Ar/N2 Plasma-Activated Al Surface for Al-Al Direct Bonding\",\"authors\":\"Liangxing Hu, Y. Lim, P. Zhao, Michael Joo Zhong Lim, Chuan Seng Tan\",\"doi\":\"10.1109/ectc51906.2022.00060\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, two-step argon/nitrogen plasma-activated aluminum surface for aluminum-aluminum direct bonding is reported. Surfaces from the as-deposited and the argon/nitrogen plasma-activated aluminum are characterized for hydrophilicity and surface chemical states. The results demonstrate that the plasma-activated aluminum surface has smaller water contact angle at 8° (i.e. more hydrophilic) and a thin layer of aluminum nitride. Moreover, the bonded plasma-activated dies, annealed at 300°C under 2000 mBar, have an impressive mechanical bonding strength of ~32 MPa with superior bonding quality. This plasma-activated bonding process is fast (10 s), requires low bonding force (50 N) and can be carried out in cleanroom environment, indicating its full promise for high-throughput heterogeneous integration and advanced packaging.\",\"PeriodicalId\":139520,\"journal\":{\"name\":\"2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ectc51906.2022.00060\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 72nd Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ectc51906.2022.00060","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two-Step Ar/N2 Plasma-Activated Al Surface for Al-Al Direct Bonding
In this study, two-step argon/nitrogen plasma-activated aluminum surface for aluminum-aluminum direct bonding is reported. Surfaces from the as-deposited and the argon/nitrogen plasma-activated aluminum are characterized for hydrophilicity and surface chemical states. The results demonstrate that the plasma-activated aluminum surface has smaller water contact angle at 8° (i.e. more hydrophilic) and a thin layer of aluminum nitride. Moreover, the bonded plasma-activated dies, annealed at 300°C under 2000 mBar, have an impressive mechanical bonding strength of ~32 MPa with superior bonding quality. This plasma-activated bonding process is fast (10 s), requires low bonding force (50 N) and can be carried out in cleanroom environment, indicating its full promise for high-throughput heterogeneous integration and advanced packaging.