{"title":"一种用于GPS应用的新型MMIC PHEMT低噪声放大器","authors":"H. Morkner, M. Frank, R. Kishimura","doi":"10.1109/MCS.1992.185985","DOIUrl":null,"url":null,"abstract":"A monolithic two-stage pseudomorphic high-electron-mobility transistor (PHEMT) low-noise amplifier (LNA) has been developed for the Global Positioning System (GPS) and spread spectrum bands covering 0.5 to 3.0 GHz. This amplifier uses Avantek's PHEMT devices with sub-0.2- mu m gate lengths and 0.25-dB noise figures in this band. The amplifier is unique in its use of a source follower second stage, resistive feedback, and on-chip matching. Gain of 15 dB and a noise figure of 1.7 dB have been measured. Designed to fit into a plastic 86 or SOT-143 surface mount package, the die is small, draws low current, utilizes low voltage, and has no bias choke requirement.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"196 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"A novel MMIC PHEMT low noise amplifier for GPS applications\",\"authors\":\"H. Morkner, M. Frank, R. Kishimura\",\"doi\":\"10.1109/MCS.1992.185985\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A monolithic two-stage pseudomorphic high-electron-mobility transistor (PHEMT) low-noise amplifier (LNA) has been developed for the Global Positioning System (GPS) and spread spectrum bands covering 0.5 to 3.0 GHz. This amplifier uses Avantek's PHEMT devices with sub-0.2- mu m gate lengths and 0.25-dB noise figures in this band. The amplifier is unique in its use of a source follower second stage, resistive feedback, and on-chip matching. Gain of 15 dB and a noise figure of 1.7 dB have been measured. Designed to fit into a plastic 86 or SOT-143 surface mount package, the die is small, draws low current, utilizes low voltage, and has no bias choke requirement.<<ETX>>\",\"PeriodicalId\":336288,\"journal\":{\"name\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"196 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1992.185985\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.185985","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel MMIC PHEMT low noise amplifier for GPS applications
A monolithic two-stage pseudomorphic high-electron-mobility transistor (PHEMT) low-noise amplifier (LNA) has been developed for the Global Positioning System (GPS) and spread spectrum bands covering 0.5 to 3.0 GHz. This amplifier uses Avantek's PHEMT devices with sub-0.2- mu m gate lengths and 0.25-dB noise figures in this band. The amplifier is unique in its use of a source follower second stage, resistive feedback, and on-chip matching. Gain of 15 dB and a noise figure of 1.7 dB have been measured. Designed to fit into a plastic 86 or SOT-143 surface mount package, the die is small, draws low current, utilizes low voltage, and has no bias choke requirement.<>
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