Highly uniform non-VLS GaAsSb nanowires: Towards enhanced axial growth and axial heterostructures

In this work, we utilize selective area growth of GaAs(Sb):(Si) NWs using molecular beam epitaxy in the non-VLS growth regime to develop pure zinc blende NWs with high uniformity, yield, aspect ratio and morphology control which are of utmost importance for scalability and commercialization of NW technology. We observe a surprising increased axial growth in the presence of Sb (1–2%) that contrasts the commonly believed enhancement in radial growth due to the surfactant effect of Sb. The droplet-free non-VLS growth opens further suitable pathways for pristine axial heterostructures, where first data of GaAsSb/InGaAs axial heterostructures and their distinct luminescence features will be shown. These results indicate a change in paradigm for non-VLS NWs with highly uniform axial growth that would be ideal for III-V NW integration on Si and the exploration of atomically abrupt NW heterostructures with other materials.