HfO2/SiO2 MOS叠层结构中的界面偶极调制

2018 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2018-12-01 DOI:10.1109/IEDM.2018.8614674

N. Miyata, J. Nara, T. Yamasaki, K. Sumita, R. Sano, H. Nohira

{"title":"HfO2/SiO2 MOS叠层结构中的界面偶极调制","authors":"N. Miyata, J. Nara, T. Yamasaki, K. Sumita, R. Sano, H. Nohira","doi":"10.1109/IEDM.2018.8614674","DOIUrl":null,"url":null,"abstract":"We report an electric-field-induced interface dipole modulation (IDM) in HfO<inf>2</inf>/1-ML TiO<inf>2</inf>/SiO<inf>2</inf> MOS stack structures. Experimental evidence for IDM was exhibited, and rearrangement of interfacial Ti-O configuration by an electric field was theoretically demonstrated to cause the potential modulation. Multi-stack HfO<inf>2</inf>/SiO<inf>2</inf> MOSFETs with multiple dipole modulation layers are promising in terms of a low temperature process, practical memory window, and stable potential switching.","PeriodicalId":152963,"journal":{"name":"2018 IEEE International Electron Devices Meeting (IEDM)","volume":"215 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Interface Dipole Modulation in HfO2/SiO2 MOS Stack Structures\",\"authors\":\"N. Miyata, J. Nara, T. Yamasaki, K. Sumita, R. Sano, H. Nohira\",\"doi\":\"10.1109/IEDM.2018.8614674\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report an electric-field-induced interface dipole modulation (IDM) in HfO<inf>2</inf>/1-ML TiO<inf>2</inf>/SiO<inf>2</inf> MOS stack structures. Experimental evidence for IDM was exhibited, and rearrangement of interfacial Ti-O configuration by an electric field was theoretically demonstrated to cause the potential modulation. Multi-stack HfO<inf>2</inf>/SiO<inf>2</inf> MOSFETs with multiple dipole modulation layers are promising in terms of a low temperature process, practical memory window, and stable potential switching.\",\"PeriodicalId\":152963,\"journal\":{\"name\":\"2018 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"215 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2018.8614674\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2018.8614674","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们报道了HfO2/1-ML TiO2/SiO2 MOS堆叠结构中的电场诱导界面偶极子调制(IDM)。给出了IDM的实验证据，并从理论上证明了电场对界面Ti-O结构的重排是引起电位调制的原因。具有多个偶极调制层的多堆叠HfO2/SiO2 mosfet在低温工艺，实用的记忆窗口和稳定的电位开关方面具有前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Interface Dipole Modulation in HfO2/SiO2 MOS Stack Structures

We report an electric-field-induced interface dipole modulation (IDM) in HfO2/1-ML TiO2/SiO2 MOS stack structures. Experimental evidence for IDM was exhibited, and rearrangement of interfacial Ti-O configuration by an electric field was theoretically demonstrated to cause the potential modulation. Multi-stack HfO2/SiO2 MOSFETs with multiple dipole modulation layers are promising in terms of a low temperature process, practical memory window, and stable potential switching.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 IEEE International Electron Devices Meeting (IEDM)

自引率

0.00%

发文量