基于gan的数字发射机链,利用推挽栅极驱动器实现高开关速度和内置DPD

Florian Huhn, A. Wentzel, W. Heinrich
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引用次数: 5

摘要

本文提出了一个全数字发射机链,包括一个调制器和一个数字微波功率放大器(PA) MMIC。d级末级栅极采用推挽驱动器,提高开关速度。据作者所知,这是第一次在GaN HEMT工艺上实现这种方法。采用900 MHz载波调制基带信号对柔性紧凑芯片的性能进行了评估。为了将IQ信号编码为二进制流,使用了内置DPD的调制方案,从而提高了排队效率,因为不会消耗额外的计算能力。ACLR值达到43.5 dB以上,几乎满足3GPP的频谱要求。给出了与其他出版物所取得的信号质量的比较。
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GaN-based digital transmitter chain utilizing push-pull gate drivers for high switching speed and built-in DPD
This paper presents a fully digital transmitter chain, including a modulator and a digital microwave power amplifier (PA) MMIC. It uses push-pull drivers for the gates of the class-D final stage for improved switching speed. To the authors' knowledge this is the first time this approach is implemented on a GaN HEMT process. The performance of the flexible and compact chip is evaluated with modulated baseband signals at a 900 MHz carrier. For encoding the IQ signals into a binary stream, a modulation scheme with a built-in DPD is used, resulting in a higher line-up efficiency as no additional computational power is dissipated. ACLR values of more than 43.5 dB are reached almost fulfilling the 3GPP spectral requirements. A comparison of achieved signal quality to other publications is given.
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