Si-SiO/sub - 2/结构电应力条件的阴极发光评价

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 1997-07-21 DOI:10.1109/IPFA.1997.638345

X. Liu, D. Chan, J. Phang, W. Chim

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摘要

在本文中，我们描述了一种新现象的观察结果，该现象可以扩展到对Si-SiO/sub - 2/结构的电应力退化提供非电学和物理评价。本文描述了两个新的观察结果，即热电子注入诱导的2.7 eV发光中心和2.7 eV CL峰积累对界面应力的依赖。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Cathodoluminescence evaluation of electrical stress condition of Si-SiO/sub 2/ structures

In this paper, we describe the observation of a new phenomenon which may be extended to provide a non electrical and physical evaluation of the electrical stress degradation of Si-SiO/sub 2/ structures. Two novel observations, the hot-electron-injection-induced 2.7 eV luminescence centers and the interfacial stress dependence of the 2.7 eV CL peak build-up, are described.

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Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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