超薄栅极氧化物去耦后等离子体氮化退火的影响

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) Pub Date : 2002-07-12 DOI:10.1109/IPFA.2002.1025669

C. Lek, B. Cho, W. Loh, C. Ang, Wenhe Lin, Yun-Ling Tan, Jia-Zheng Zhen, L. Chan, S. Tan, Tupei Chen

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引用次数: 1

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新加坡国立大学电气与计算机工程系硅纳米器件实验室(SNDL)，新加坡工程大道3号4号，电子邮件:elebjcho@us.edu.sg新加坡特许半导体制造有限公司，技术开发部，新加坡伍德兰工业园区D街2号60号，738406南洋理工大学电气与电子工程系，南洋大道。新加坡639798

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Effects of post-decoupled-plasma-nitridation annealing of ultra-thin gate oxide

Silicon Nan0 Device Laboratory (SNDL), Dept. of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, e-mail : elebjcho@us.edu.sg 'Chartered Semiconductor Manufacturing Ltd, Technology Development Department, 60 Woodlands Industrial Park D, Street 2, Singapore 738406 Department of Electrical & Electronics Engineering, Nanyang Technological University, Nanyang Avenue. Singapore 639798 2

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Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)

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