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摘要

随着时间的推移,光刻技术的相应改进促进了晶体管特征尺寸的缩小。然而,近年来用于光刻的光学光源的波长没有按比例缩放。从180nm器件开始,光源的波长一直保持在193nm。因此,当前和未来的65nm、45nm、32nm和22nm技术节点将使用波长远大于特征尺寸的光源。这就产生了一个特殊的问题,即制造设备上的线宽是相邻线之间相对间距的函数。尽管在布局规则上有许多限制,但由于这种特殊性(也称为禁止间距问题),互连仍然可能受到限制。在这次演讲中,我们将探讨光刻技术中出现的一系列问题,因为它们与芯片测试有关。
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The Guiding Light for Chip Testing
Scaling of transistor feature size over time has been facilitated by corresponding improvement in lithography technology. However, in recent times the wavelength of the optical light source used for photolithography has not scaled. Starting with 180nm devices, the wavelength of optical source has remained the same at 193nm. Consequently, current and upcoming technology nodes at 65nm, 45nm, 32nm and 22nm will be using a light source with wavelength much greater than the feature size. This creates a peculiar problem where line width on manufactured devices is a function of relative spacing between adjacent lines. Despite numerous restriction on layout rules, interconnects may still suffer from constriction due to this peculiarity also known as forbidden pitch problem. In this talk, we will explore the range of issues that arise from photolithography as they relate to chip testing.
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