{"title":"电离辐射对不同布局结构PD-SOI器件泄漏电流的影响","authors":"Liu Yuan, He Yu-juan, En Yun-fei, Shi Qian","doi":"10.1109/EDSSC.2013.6628221","DOIUrl":null,"url":null,"abstract":"Total dose dependence of leakage current in the partially depleted SOI devices with different layout structures are presented. The experimental results show that the leakage currents in the irradiated PD-SOI device with standard structure are significant affected by trench sidewall leakage, but the leakage currents in the enclosed gate and H gate structures are more affected by the conduction of back gate parasitic transistor and gate induced drain leakage currents.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Ionizing radiation induced leakage current in the PD-SOI devices with different layout structures\",\"authors\":\"Liu Yuan, He Yu-juan, En Yun-fei, Shi Qian\",\"doi\":\"10.1109/EDSSC.2013.6628221\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Total dose dependence of leakage current in the partially depleted SOI devices with different layout structures are presented. The experimental results show that the leakage currents in the irradiated PD-SOI device with standard structure are significant affected by trench sidewall leakage, but the leakage currents in the enclosed gate and H gate structures are more affected by the conduction of back gate parasitic transistor and gate induced drain leakage currents.\",\"PeriodicalId\":333267,\"journal\":{\"name\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2013.6628221\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628221","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ionizing radiation induced leakage current in the PD-SOI devices with different layout structures
Total dose dependence of leakage current in the partially depleted SOI devices with different layout structures are presented. The experimental results show that the leakage currents in the irradiated PD-SOI device with standard structure are significant affected by trench sidewall leakage, but the leakage currents in the enclosed gate and H gate structures are more affected by the conduction of back gate parasitic transistor and gate induced drain leakage currents.