B. Landau, B. Bastani, D. Haueisen, R. Lahri, S. P. Joshi, J. Small
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引用次数: 3
摘要
本文报道了在1 μ m BiCMOS工艺中采用磷和砷掺杂多发射体对双极器件进行优化的两种方法。评估包括在连接隔离工艺的背景下对两种发射器类型的工艺和器件参数进行比较。讨论了ECL和BiCMOS环形振荡器以及BiCMOS 256k SRAM测量的器件优化的影响。最后，磷和砷多发射体的可靠性，在β降解方面，由于反向偏置的发射极-基结，提出
Poly emitter bipolar transistor optimization for an advanced BiCMOS technology
Two approaches involving phosphorus- and arsenic-doped poly emitters for bipolar device optimization in a 1 mu m BiCMOS process are reported. An evaluation includes a comparison of process and device parameters for the two emitter types in the context of a junction-isolated process. The impact of device optimization as measured by ECL and BiCMOS ring oscillators and a BiCMOS 256 K SRAM is discussed. Finally, the reliability of phosphorus and arsenic poly emitters, in terms of beta degradation due to reverse biasing of the emitter-base junction, is presented.<>
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