智能电源和集成多芯片电源电路设计的快速热建模

P. Dupuy, J. Dorkel, P. Tounsi, L. Borucki
{"title":"智能电源和集成多芯片电源电路设计的快速热建模","authors":"P. Dupuy, J. Dorkel, P. Tounsi, L. Borucki","doi":"10.1109/ISPSD.1996.509474","DOIUrl":null,"url":null,"abstract":"This paper recalls how the two-port network theory can be introduced to solve the 3D heat flow equation in a multilayered plane structure. In this paper we present two pieces of software based on the application of this theory, which are used to analyze the thermal behavior of SmartMos circuits with a fairly good accuracy and short computational times. Finally, an illustration is given and some comparisons are made with experiments and an FE code.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Rapid thermal modeling for smart-power and integrated multichip power circuit design\",\"authors\":\"P. Dupuy, J. Dorkel, P. Tounsi, L. Borucki\",\"doi\":\"10.1109/ISPSD.1996.509474\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper recalls how the two-port network theory can be introduced to solve the 3D heat flow equation in a multilayered plane structure. In this paper we present two pieces of software based on the application of this theory, which are used to analyze the thermal behavior of SmartMos circuits with a fairly good accuracy and short computational times. Finally, an illustration is given and some comparisons are made with experiments and an FE code.\",\"PeriodicalId\":377997,\"journal\":{\"name\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1996.509474\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509474","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

本文回顾了如何引入双端口网络理论来求解多层平面结构中的三维热流方程。在本文中,我们提出了两个基于该理论应用的软件,用于分析SmartMos电路的热行为,具有相当好的精度和较短的计算时间。最后给出了实例,并与实验和有限元程序进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Rapid thermal modeling for smart-power and integrated multichip power circuit design
This paper recalls how the two-port network theory can be introduced to solve the 3D heat flow equation in a multilayered plane structure. In this paper we present two pieces of software based on the application of this theory, which are used to analyze the thermal behavior of SmartMos circuits with a fairly good accuracy and short computational times. Finally, an illustration is given and some comparisons are made with experiments and an FE code.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Bonded SOI technologies for high voltage applications Design considerations and characteristics of rugged punchthrough (PT) IGBTs with 4.5 kV blocking capability Two-dimensional analysis of surge response in thyristor lightning surge protection devices Grounded-trench-MOS structure assisted normally-off bipolar-mode power FET Experimental verification of large current capability of lateral IEGTs on SOI
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1