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引用次数: 1

摘要

报道了一种提高拉伸速度和减小拉伸长度的AFM光刻和光学光刻混合方法。先进的器件,如量子器件,既有纳米级结构,也有大面积结构,如接触垫。单独使用AFM光刻制作所有图案需要很长时间。AFM光刻与光学光刻相结合是较好的选择。这样,AFM光刻技术仅用于纳米结构。当使用这种混合工艺时,最重要的问题是光学光刻和AFM光刻产生的图案对齐。为了解决这一问题,我们采用光刻曝光法在抗蚀剂表面微显影制备小台阶结构。利用原子力显微镜对光刻工艺制备的抗蚀膜进行了观察,得到了其图案结构的位置信息。额外的图案是通过使用AFM光刻完成的。可以在不曝光的情况下观察图案,因为观察表面所需的力和曝光所需的力是不同的。
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AFM lithography combined with optical lithography
Reports on a hybrid method of AFM lithography and optical lithography that increases the drawing speed and decreases the drawing length. Advanced devices, such as quantum ones, have both nanometer-scale structures and large area structures, such as contact pads. It takes a long time to fabricate all the patterns using AFM lithography alone. It is preferable to combine AFM lithography with optical lithography. In this way, AFM lithography is used for nanometer structures only. When this hybrid process is used, the most significant problem is aligning the patterns produced by optical lithography and AFM lithography. To solve this problem, we use small step structures fabricated by slight development on the resist surface, fabricated by optical-lithography exposure. The positional information of the pattern structure in the resist film, fabricated by using optical lithography, is obtained by observing the steps with AFM. The additional patterning is performed by using AFM lithography. Patterns can be observed without exposure, since the force needed to observe the surface and that for the exposure are different.
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