{"title":"密度梯度模型的二维和三维mosfet仿真","authors":"T. Toyabe","doi":"10.1109/IWJT.2004.1306868","DOIUrl":null,"url":null,"abstract":"A 2D and 3D density gradient model is described. Drain current characteristics taking quantum effects into consideration are simulated for extremely scaled bulk nMOSFETs with nanometer channel length and decananoscale tri-gate FinFETs.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Two and three dimensional MOSFETs simulation with density gradient model\",\"authors\":\"T. Toyabe\",\"doi\":\"10.1109/IWJT.2004.1306868\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 2D and 3D density gradient model is described. Drain current characteristics taking quantum effects into consideration are simulated for extremely scaled bulk nMOSFETs with nanometer channel length and decananoscale tri-gate FinFETs.\",\"PeriodicalId\":342825,\"journal\":{\"name\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2004.1306868\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306868","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two and three dimensional MOSFETs simulation with density gradient model
A 2D and 3D density gradient model is described. Drain current characteristics taking quantum effects into consideration are simulated for extremely scaled bulk nMOSFETs with nanometer channel length and decananoscale tri-gate FinFETs.
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