7nm FinFET Plasma Charge Recording Device

A new wafer-level coupling plasma charge recorder fabricated with 7nm FinFET CMOS logic process is presented in this paper. This plasma ion charge recording device provides the historic and quantitative plasma ion charges of damascene metallization steps in advanced 7nm FinFET COMS logic processes. The high-resolution plasma ion recorder is formed by an accurate FinFET coupling structure to store the plasma ion level and distribution of the whole wafer. By a simple wafer-level WAT measurement, the promising plasma charge recording device can efficiently collect the accumulated ion charges, ion polarization, and tiny plasma fluctuation of each metallization process step in 7nm FinFET CMOS logic technologies, which definitely provides a superior device and method in developing a reliable and non-latent plasma damage process for 7nm FinFET technology and beyond.