高电导率TaSi2/n+多晶硅栅极MOS结构的一般可靠性

18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI:10.1109/IRPS.1980.362933

A. K. Sinha, D. Fraser, S. Murarka

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引用次数: 0

摘要

结果表明，TaSi2/n+多晶硅栅极结构具有~2欧姆/平方的稳定片电阻，并能适应传统的n沟道硅栅极工艺序列。MOS和IGFET参数表现良好，即由复合材料的n+多晶硅层决定。对于目前采用的工艺步骤序列，静态和动态偏温稳定性都很好。某些工艺和结构的限制确实存在，这些限制已经确定。

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Generic Reliability of the High-Conductivity TaSi2/n+ Poly-Si Gate MOS Structure

Results are presented on the generic reliability of the TaSi2/n+ poly-Si gate structure which has a stable sheet resistance of ~2 ohm/sq and which retrofits into the conventional n-channel Si-gate process sequence. The MOS and IGFET parameters are well-behaved, i.e., determined by the n+ poly-Si layer of the composite. The static and dynamic bias-temperature stabilities are excellent for the presently employed sequence of process steps. Certain process and structure limitations do exist, and these have been defined.

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18th International Reliability Physics Symposium

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