利用H/sub //He等离子体对多孔超低钾进行低损伤灰化

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) Pub Date : 2003-06-02 DOI:10.1109/IITC.2003.1219737

A. Matsushita, N. Ohashi, K. Inukai, H.J. Shin, S. Sone, K. Sudou, K. Misawa, I. Matsumoto, N. Kobayashi

{"title":"利用H/sub //He等离子体对多孔超低钾进行低损伤灰化","authors":"A. Matsushita, N. Ohashi, K. Inukai, H.J. Shin, S. Sone, K. Sudou, K. Misawa, I. Matsumoto, N. Kobayashi","doi":"10.1109/IITC.2003.1219737","DOIUrl":null,"url":null,"abstract":"Novel high-temperature (>150/spl deg/C ) ashing using mixture of H/sub 2/ and He gases (H/sub 2//He) was developed for low damage damascene fabrication of ultra low-k ILDs. Dependence of ashing characteristics on generated plasma configuration and temperature was investigated to optimize the process. Its applications to 320 nm pitch Cu/porous-MSQ (k=2.3) interconnects using 300 mm wafers showed no degradation in leakage currents and wiring capacitance. It is feasible for precise dual damascene etch using the conventional ArF photo resist (PR) mask process towards 65 nm technology node.","PeriodicalId":212619,"journal":{"name":"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Low damage ashing using H/sub 2//He plasma for porous ultra low-k\",\"authors\":\"A. Matsushita, N. Ohashi, K. Inukai, H.J. Shin, S. Sone, K. Sudou, K. Misawa, I. Matsumoto, N. Kobayashi\",\"doi\":\"10.1109/IITC.2003.1219737\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Novel high-temperature (>150/spl deg/C ) ashing using mixture of H/sub 2/ and He gases (H/sub 2//He) was developed for low damage damascene fabrication of ultra low-k ILDs. Dependence of ashing characteristics on generated plasma configuration and temperature was investigated to optimize the process. Its applications to 320 nm pitch Cu/porous-MSQ (k=2.3) interconnects using 300 mm wafers showed no degradation in leakage currents and wiring capacitance. It is feasible for precise dual damascene etch using the conventional ArF photo resist (PR) mask process towards 65 nm technology node.\",\"PeriodicalId\":212619,\"journal\":{\"name\":\"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2003.1219737\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2003.1219737","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

采用H/sub / 2/ He混合气体(H/sub / 2//He)，研制了一种新型高温灰化(>150/spl℃)，用于低损伤损伤制备超低k ild。研究了灰化特性与生成等离子体结构和温度的关系，以优化工艺。在使用300mm晶圆的320nm间距Cu/ pore - msq (k=2.3)互连中，其泄漏电流和布线电容没有下降。采用传统的ArF光阻(PR)掩模工艺在65 nm工艺节点上实现精确双大马士革刻蚀是可行的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low damage ashing using H/sub 2//He plasma for porous ultra low-k

Novel high-temperature (>150/spl deg/C ) ashing using mixture of H/sub 2/ and He gases (H/sub 2//He) was developed for low damage damascene fabrication of ultra low-k ILDs. Dependence of ashing characteristics on generated plasma configuration and temperature was investigated to optimize the process. Its applications to 320 nm pitch Cu/porous-MSQ (k=2.3) interconnects using 300 mm wafers showed no degradation in leakage currents and wiring capacitance. It is feasible for precise dual damascene etch using the conventional ArF photo resist (PR) mask process towards 65 nm technology node.

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Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)

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