{"title":"单片30w连续AlGaAs/GaAs异质结双极晶体管，频率为3ghz","authors":"D. Hill, Hua-Quen Tserng, Tae Kim, M. Tutt","doi":"10.1109/GAAS.1996.567875","DOIUrl":null,"url":null,"abstract":"We have fabricated heterojunction bipolar transistors that, to our knowledge, exhibit record operating voltage and single-chip output power for GaAs microwave power devices. A device with 720 /spl mu/m total emitter length achieved an output power of 4 W with 62% power-added efficiency at 3 GHz at a collector bias of 20 V. A device monolithically combining 16 unit cells, for a total emitter length of 7.68 mm, achieved a CW output power of 30 W with 55% power-added efficiency at 3 GHz.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Single-chip 30 W CW AlGaAs/GaAs heterojunction bipolar transistor at 3 GHz\",\"authors\":\"D. Hill, Hua-Quen Tserng, Tae Kim, M. Tutt\",\"doi\":\"10.1109/GAAS.1996.567875\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have fabricated heterojunction bipolar transistors that, to our knowledge, exhibit record operating voltage and single-chip output power for GaAs microwave power devices. A device with 720 /spl mu/m total emitter length achieved an output power of 4 W with 62% power-added efficiency at 3 GHz at a collector bias of 20 V. A device monolithically combining 16 unit cells, for a total emitter length of 7.68 mm, achieved a CW output power of 30 W with 55% power-added efficiency at 3 GHz.\",\"PeriodicalId\":365997,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1996.567875\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567875","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Single-chip 30 W CW AlGaAs/GaAs heterojunction bipolar transistor at 3 GHz
We have fabricated heterojunction bipolar transistors that, to our knowledge, exhibit record operating voltage and single-chip output power for GaAs microwave power devices. A device with 720 /spl mu/m total emitter length achieved an output power of 4 W with 62% power-added efficiency at 3 GHz at a collector bias of 20 V. A device monolithically combining 16 unit cells, for a total emitter length of 7.68 mm, achieved a CW output power of 30 W with 55% power-added efficiency at 3 GHz.
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