射频电路的热载波和软击穿可靠性

ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575) Pub Date : 2002-12-19 DOI:10.1109/SMELEC.2002.1217816

E. Xiao, J. Yuan, Hong Yang

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引用次数: 1

摘要

采用0.16 /spl mu/m CMOS技术，研究了热载流子(HC)和软击穿(SBD)效应对射频电路性能的影响。提出了两种设计方法来减少高频和高频对射频电路的影响。使用低噪声放大器(LNA)和压控振荡器(VCO)来验证可用于构建更可靠的射频电路的设计技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Hot carrier and soft breakdown reliability for RF circuits

RF circuit performance degradations due to hot carrier (HC) and soft breakdown (SBD) effects are studied with 0.16 /spl mu/m CMOS technology. Two design techniques are proposed to reduce the HC and SBD effects on RF circuits. A low noise amplifier (LNA) and a voltage-controlled oscillator (VCO) are used to verify the design techniques that can be used to build more reliable RF circuits.

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ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)

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