{"title":"一种特殊的测试结构，用于测量功率二极管的注入相关串联电阻","authors":"S. Bellone, S. Daliento, A. Sanseverino","doi":"10.1109/ICMTS.1999.766220","DOIUrl":null,"url":null,"abstract":"In this paper, the capability of a new test pattern for extraction of both the intrinsic series resistance and the injection level of power diodes is presented. The method is based on the measurement of the DC voltage manifesting at a sensing region placed near the active device. Two dimensional simulations showing the correct operation of the test structure are reported. Finally, experimental results obtained on fabricated diodes are presented.","PeriodicalId":273071,"journal":{"name":"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)","volume":"319 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A special test structure for the measurement of the injection dependent series resistance of power diodes\",\"authors\":\"S. Bellone, S. Daliento, A. Sanseverino\",\"doi\":\"10.1109/ICMTS.1999.766220\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the capability of a new test pattern for extraction of both the intrinsic series resistance and the injection level of power diodes is presented. The method is based on the measurement of the DC voltage manifesting at a sensing region placed near the active device. Two dimensional simulations showing the correct operation of the test structure are reported. Finally, experimental results obtained on fabricated diodes are presented.\",\"PeriodicalId\":273071,\"journal\":{\"name\":\"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)\",\"volume\":\"319 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1999.766220\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1999.766220","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A special test structure for the measurement of the injection dependent series resistance of power diodes
In this paper, the capability of a new test pattern for extraction of both the intrinsic series resistance and the injection level of power diodes is presented. The method is based on the measurement of the DC voltage manifesting at a sensing region placed near the active device. Two dimensional simulations showing the correct operation of the test structure are reported. Finally, experimental results obtained on fabricated diodes are presented.
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