混合硅/分子存储器:新功能的协同工程

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269339

S. Gowda, G. Mathur, Qihang Li, S. Surthi, Q. Zhao, J. Lindsey, K. Mobley, D. F. Bocian, V. Misra

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引用次数: 7

摘要

成功地设计了混合CMOS/分子电容器中硅的特性，以生产多比特和长保留时间的器件。电荷存储分子附着在硅衬底上，可以产生多比特和长保留时间的特性，这可能对纳米级高密度存储应用具有吸引力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Hybrid silicon/molecular memories: co-engineering for novel functionality

The properties of silicon in hybrid CMOS/molecular capacitors were successfully engineered to produce multiple bit and long retention-time devices. Charge storage molecules were attached to silicon substrates to produce multiple bit and long retention time characteristics that may be attractive for nanoscale high density memory applications.

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IEEE International Electron Devices Meeting 2003

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