{"title":"SIMOX晶圆的快速转动特性","authors":"S.T. Liu, P. Fechner, R. L. Roisen","doi":"10.1109/SOSSOI.1990.145710","DOIUrl":null,"url":null,"abstract":"Physical and electrical properties of incoming low-defect SIMOX SOI wafers were characterized by fast turn techniques to determine their suitability for device applications. Physical properties were evaluated extensively with optical reflectometry and cross-sectional transmission electron microscopy. To facilitate evaluation of the back channel property with minimal processing. Schottky barrier MOS and simple regular MOS test structures were made. Schottky barrier behavior was noted in the characteristics near the origin and the conduction at zero gate bias. Back channel properties were evaluated first, and then the device was subjected to irradiation using a 10-keV ARACOR/4100 X-ray source with doses in the Mrad (SiO/sub 2/) region. The threshold voltage shift and the subthreshold voltage swing were measured. The radiation induced interface states in the Mrad (SiO/sub 2/) region were determined.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Fast turn characterization of SIMOX wafers\",\"authors\":\"S.T. Liu, P. Fechner, R. L. Roisen\",\"doi\":\"10.1109/SOSSOI.1990.145710\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Physical and electrical properties of incoming low-defect SIMOX SOI wafers were characterized by fast turn techniques to determine their suitability for device applications. Physical properties were evaluated extensively with optical reflectometry and cross-sectional transmission electron microscopy. To facilitate evaluation of the back channel property with minimal processing. Schottky barrier MOS and simple regular MOS test structures were made. Schottky barrier behavior was noted in the characteristics near the origin and the conduction at zero gate bias. Back channel properties were evaluated first, and then the device was subjected to irradiation using a 10-keV ARACOR/4100 X-ray source with doses in the Mrad (SiO/sub 2/) region. The threshold voltage shift and the subthreshold voltage swing were measured. The radiation induced interface states in the Mrad (SiO/sub 2/) region were determined.<<ETX>>\",\"PeriodicalId\":344373,\"journal\":{\"name\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOSSOI.1990.145710\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145710","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Physical and electrical properties of incoming low-defect SIMOX SOI wafers were characterized by fast turn techniques to determine their suitability for device applications. Physical properties were evaluated extensively with optical reflectometry and cross-sectional transmission electron microscopy. To facilitate evaluation of the back channel property with minimal processing. Schottky barrier MOS and simple regular MOS test structures were made. Schottky barrier behavior was noted in the characteristics near the origin and the conduction at zero gate bias. Back channel properties were evaluated first, and then the device was subjected to irradiation using a 10-keV ARACOR/4100 X-ray source with doses in the Mrad (SiO/sub 2/) region. The threshold voltage shift and the subthreshold voltage swing were measured. The radiation induced interface states in the Mrad (SiO/sub 2/) region were determined.<>
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