BOX缩放对30nm栅极长度FD SOI MOSFET的影响

2005 IEEE International SOI Conference Proceedings Pub Date : 2005-12-27 DOI:10.1109/SOI.2005.1563581

M. Fujiwara, T. Morooka, N. Yasutake, K. Ohuchi, N. Aoki, H. Tanimoto, M. Kondo, K. Miyano, S. Inaba, K. Ishimaru, H. Ishiuchi

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引用次数: 38

摘要

本文首次展示了标称栅极长度为30nm的超薄BOX FD SOI器件。详细研究了T/sub BOX/在5nm ~ 145nm范围内变化时FD SOI mosfet的特性。此外，还展示了T/sub BOX/的最佳设计区域，以达到性能要求。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of BOX scaling on 30 nm gate length FD SOI MOSFET

This paper presents the first demonstration of ultra-thin BOX FD SOI devices with nominal gate length of 30 nm. The characteristics of FD SOI MOSFETs are investigated in detail as T/sub BOX/ is varied from 5 nm to 145 nm. In addition, optimum design regions of T/sub BOX/ for achieving performance requirements are demonstrated.

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2005 IEEE International SOI Conference Proceedings

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