{"title":"宽频带隙半导体技术的现状及其未来","authors":"M. Rosker","doi":"10.1109/RFIC.2007.380855","DOIUrl":null,"url":null,"abstract":"This paper summarizes recent improvements in the performance and reliability of microwave and millimeter-wave wide-bandgap gallium nitride on silicon carbide devices and their promise for future integrated circuits. Many recent advances have been made as a result of the on-going Phase II wide band gap semiconductor for RF applications (WBGS-RF) program funded by the Defense Advanced Research Projects Agency (DARPA). During Phase II of the program, significant progress has been made toward realizing wide-bandgap devices that provide outstanding performance at reliability levels that will allow their use in a wide variety of high power applications.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"The Present State of the Art of Wide-Bandgap Semiconductors and Their Future\",\"authors\":\"M. Rosker\",\"doi\":\"10.1109/RFIC.2007.380855\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper summarizes recent improvements in the performance and reliability of microwave and millimeter-wave wide-bandgap gallium nitride on silicon carbide devices and their promise for future integrated circuits. Many recent advances have been made as a result of the on-going Phase II wide band gap semiconductor for RF applications (WBGS-RF) program funded by the Defense Advanced Research Projects Agency (DARPA). During Phase II of the program, significant progress has been made toward realizing wide-bandgap devices that provide outstanding performance at reliability levels that will allow their use in a wide variety of high power applications.\",\"PeriodicalId\":356468,\"journal\":{\"name\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2007.380855\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2007.380855","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Present State of the Art of Wide-Bandgap Semiconductors and Their Future
This paper summarizes recent improvements in the performance and reliability of microwave and millimeter-wave wide-bandgap gallium nitride on silicon carbide devices and their promise for future integrated circuits. Many recent advances have been made as a result of the on-going Phase II wide band gap semiconductor for RF applications (WBGS-RF) program funded by the Defense Advanced Research Projects Agency (DARPA). During Phase II of the program, significant progress has been made toward realizing wide-bandgap devices that provide outstanding performance at reliability levels that will allow their use in a wide variety of high power applications.
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