{"title":"共漏CMOS功率放大器:一种备用功率放大器","authors":"Muhammad Abdullah Khan, R. Negra","doi":"10.23919/eumc.2017.8231021","DOIUrl":null,"url":null,"abstract":"In this paper, we present an 880 MHz common-drain power amplifier (CDPA) in 130 nm CMOS technology. New PA topologies are required to address the issues of linearity, reliability, and efficiency. The CDPA is one such promising topology. Owing to the inherent feedback nature of a CDPA, the output voltage is a replica of input voltage, thus making the CDPA a highly linear amplifier with good efficiency. Secondly, the voltage following property results in significant reduction of the voltage-stress at the device input and output terminals. Small-signal measurement results show a gain of 10.5 dB with Sn less than −10 dB. Large-signal measurement results indicate that the designed CDPA achieves an output 1-dB compression point of 27.9 dBm with an associated 1-dB power added efficiency of 31.9 %. The amplifier saturates at 28.5dBm. The total die area of the amplifier is 0.76 mm 2 including pads. The amplifier is tested at compression point for a duration of 10 hours with average deviation of 0.15 dB in gain, thus indicating a reliable operation.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"135 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Common-drain CMOS power amplifier: An alternative power amplifier\",\"authors\":\"Muhammad Abdullah Khan, R. Negra\",\"doi\":\"10.23919/eumc.2017.8231021\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present an 880 MHz common-drain power amplifier (CDPA) in 130 nm CMOS technology. New PA topologies are required to address the issues of linearity, reliability, and efficiency. The CDPA is one such promising topology. Owing to the inherent feedback nature of a CDPA, the output voltage is a replica of input voltage, thus making the CDPA a highly linear amplifier with good efficiency. Secondly, the voltage following property results in significant reduction of the voltage-stress at the device input and output terminals. Small-signal measurement results show a gain of 10.5 dB with Sn less than −10 dB. Large-signal measurement results indicate that the designed CDPA achieves an output 1-dB compression point of 27.9 dBm with an associated 1-dB power added efficiency of 31.9 %. The amplifier saturates at 28.5dBm. The total die area of the amplifier is 0.76 mm 2 including pads. The amplifier is tested at compression point for a duration of 10 hours with average deviation of 0.15 dB in gain, thus indicating a reliable operation.\",\"PeriodicalId\":120932,\"journal\":{\"name\":\"2017 12th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"135 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 12th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/eumc.2017.8231021\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/eumc.2017.8231021","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
本文设计了一种采用130 nm CMOS技术的880 MHz共漏功率放大器(CDPA)。需要新的PA拓扑来解决线性、可靠性和效率问题。CDPA就是这样一个很有前途的拓扑结构。由于CDPA固有的反馈特性,输出电压是输入电压的复制品,从而使CDPA成为一个具有良好效率的高度线性放大器。其次,电压随动特性显著降低了器件输入和输出端的电压应力。小信号测量结果表明,当Sn小于−10 dB时,增益为10.5 dB。大信号测量结果表明,所设计的CDPA输出1db压缩点为27.9 dBm,相应的1db功率增加效率为31.9%。放大器在28.5dBm处达到饱和。包括焊盘在内,放大器的总模面积为0.76 mm 2。在压缩点对放大器进行了持续10小时的测试,增益平均偏差为0.15 dB,从而表明运行可靠。
Common-drain CMOS power amplifier: An alternative power amplifier
In this paper, we present an 880 MHz common-drain power amplifier (CDPA) in 130 nm CMOS technology. New PA topologies are required to address the issues of linearity, reliability, and efficiency. The CDPA is one such promising topology. Owing to the inherent feedback nature of a CDPA, the output voltage is a replica of input voltage, thus making the CDPA a highly linear amplifier with good efficiency. Secondly, the voltage following property results in significant reduction of the voltage-stress at the device input and output terminals. Small-signal measurement results show a gain of 10.5 dB with Sn less than −10 dB. Large-signal measurement results indicate that the designed CDPA achieves an output 1-dB compression point of 27.9 dBm with an associated 1-dB power added efficiency of 31.9 %. The amplifier saturates at 28.5dBm. The total die area of the amplifier is 0.76 mm 2 including pads. The amplifier is tested at compression point for a duration of 10 hours with average deviation of 0.15 dB in gain, thus indicating a reliable operation.