{"title":"辐照功率装置模拟辐射诱导中心参数","authors":"R. Siemieniec, J. Lutz, W. Sudkamp, R. Herzer","doi":"10.1109/MIEL.2002.1003168","DOIUrl":null,"url":null,"abstract":"Irradiation techniques are widely used for carrier lifetime control, especially in power devices, because of their good reproducibility. Simulation of these devices is however lacking due to missing or incomplete recombination center data, despite the availability of suitable recombination models. In this work, we used center data estimated by DLTS and lifetime measurements for the simulation of electron radiated devices and compare the results with the measured device characteristics.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Parameters of radiation-induced centers for simulation of irradiated power devices\",\"authors\":\"R. Siemieniec, J. Lutz, W. Sudkamp, R. Herzer\",\"doi\":\"10.1109/MIEL.2002.1003168\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Irradiation techniques are widely used for carrier lifetime control, especially in power devices, because of their good reproducibility. Simulation of these devices is however lacking due to missing or incomplete recombination center data, despite the availability of suitable recombination models. In this work, we used center data estimated by DLTS and lifetime measurements for the simulation of electron radiated devices and compare the results with the measured device characteristics.\",\"PeriodicalId\":221518,\"journal\":{\"name\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2002.1003168\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003168","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Parameters of radiation-induced centers for simulation of irradiated power devices
Irradiation techniques are widely used for carrier lifetime control, especially in power devices, because of their good reproducibility. Simulation of these devices is however lacking due to missing or incomplete recombination center data, despite the availability of suitable recombination models. In this work, we used center data estimated by DLTS and lifetime measurements for the simulation of electron radiated devices and compare the results with the measured device characteristics.
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