通过使用低温GaInAs，提高了AlInAs/GaInAs hbt的高频性能

International Conference on Indium Phosphide and Related Materials Pub Date : 1990-04-23 DOI:10.1109/ICIPRM.1990.202978

W. Stanchina, R. Metzger, J. Jensen, D. Rensch, M. W. Pierce, M. Delaney, R. G. Wilson, T. V. Kargodorian, Y. K. Allen

{"title":"通过使用低温GaInAs，提高了AlInAs/GaInAs hbt的高频性能","authors":"W. Stanchina, R. Metzger, J. Jensen, D. Rensch, M. W. Pierce, M. Delaney, R. G. Wilson, T. V. Kargodorian, Y. K. Allen","doi":"10.1109/ICIPRM.1990.202978","DOIUrl":null,"url":null,"abstract":"GaInAs grown at lower than normal substrate temperatures was used to reduce the amount of beryllium out-diffusion from the heavily doped bases of AlInAs/GaInAs Npn HBTs. A combined 20-nm-thick spacer structure of p-doped and undoped GaInAs grown at 300 degrees C prevented excessive amounts of beryllium from diffusing into the AlInAs emitter. This allowed base beryllium doping concentrations up to 10/sup 20/ cm/sup -3/ to be achieved, thereby reducing base resistance and increasing f/sub max/ to 70 GHz. A fifteen-stage ring oscillator utilizing these HBTs demonstrated a gate delay of 15.8 ps. The reduced outdiffusion was confirmed by secondary ion mass spectrometry (SIMS) elemental profiles in addition to electrical measurements.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Improved high frequency performance of AlInAs/GaInAs HBTs through use of low temperature GaInAs\",\"authors\":\"W. Stanchina, R. Metzger, J. Jensen, D. Rensch, M. W. Pierce, M. Delaney, R. G. Wilson, T. V. Kargodorian, Y. K. Allen\",\"doi\":\"10.1109/ICIPRM.1990.202978\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaInAs grown at lower than normal substrate temperatures was used to reduce the amount of beryllium out-diffusion from the heavily doped bases of AlInAs/GaInAs Npn HBTs. A combined 20-nm-thick spacer structure of p-doped and undoped GaInAs grown at 300 degrees C prevented excessive amounts of beryllium from diffusing into the AlInAs emitter. This allowed base beryllium doping concentrations up to 10/sup 20/ cm/sup -3/ to be achieved, thereby reducing base resistance and increasing f/sub max/ to 70 GHz. A fifteen-stage ring oscillator utilizing these HBTs demonstrated a gate delay of 15.8 ps. The reduced outdiffusion was confirmed by secondary ion mass spectrometry (SIMS) elemental profiles in addition to electrical measurements.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.202978\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.202978","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 14

摘要

在低于正常衬底温度下生长的GaInAs用于减少AlInAs/GaInAs Npn HBTs重掺杂碱的铍向外扩散量。在300℃下生长的掺p和未掺杂的GaInAs的20 nm厚的间隔层结构防止了过量的铍扩散到AlInAs发射器中。这使得碱基铍掺杂浓度高达10/sup 20/ cm/sup -3/，从而降低了碱基电阻，并将f/sub max/增加到70 GHz。利用这些hbt的15级环形振荡器显示出15.8 ps的门延迟。除了电测量外，二次离子质谱(SIMS)元素谱也证实了外扩散的减少。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Improved high frequency performance of AlInAs/GaInAs HBTs through use of low temperature GaInAs

GaInAs grown at lower than normal substrate temperatures was used to reduce the amount of beryllium out-diffusion from the heavily doped bases of AlInAs/GaInAs Npn HBTs. A combined 20-nm-thick spacer structure of p-doped and undoped GaInAs grown at 300 degrees C prevented excessive amounts of beryllium from diffusing into the AlInAs emitter. This allowed base beryllium doping concentrations up to 10/sup 20/ cm/sup -3/ to be achieved, thereby reducing base resistance and increasing f/sub max/ to 70 GHz. A fifteen-stage ring oscillator utilizing these HBTs demonstrated a gate delay of 15.8 ps. The reduced outdiffusion was confirmed by secondary ion mass spectrometry (SIMS) elemental profiles in addition to electrical measurements.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

International Conference on Indium Phosphide and Related Materials

自引率

0.00%

发文量