基于表面电位的超薄体轻掺杂FD SOI mosfet紧凑模型

Ulis 2011 Ultimate Integration on Silicon Pub Date : 2011-03-14 DOI:10.1109/ULIS.2011.5757972

J. E. Husseini, F. Martinez, M. Bawedin, M. Valenza, R. Ritzenthaler, F. Lime, B. Iñíguez

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摘要

本文提出了一种基于表面电位的轻掺杂超薄体长沟道全耗尽SOI MOSFET紧凑模型。采用适当的边界条件求解了一维泊松方程，并给出了前后表面电位的封闭解。最后将模型与数值模拟结果进行了比较，两者吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A surface potential based compact model for lightly doped FD SOI MOSFETs with ultra-thin body

In this paper, a new surface potential based compact model for long channel fully depleted SOI MOSFET with lightly doped ultra-thin body is presented. The 1-D Poisson equation is solved using the appropriate boundary conditions, and a closed-form surface potential solution is proposed for the front and back surface potentials. Finally the model was compared to numerical simulations and a good agreement is observed.

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Ulis 2011 Ultimate Integration on Silicon

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