基于硅掺杂跃迁的太赫兹发射装置

First IEEE International Conference on Group IV Photonics, 2004. Pub Date : 2004-09-29 DOI:10.1109/GROUP4.2004.1416645

J. Kolodzey, P. Lv, R. Troeger, S. Kim

{"title":"基于硅掺杂跃迁的太赫兹发射装置","authors":"J. Kolodzey, P. Lv, R. Troeger, S. Kim","doi":"10.1109/GROUP4.2004.1416645","DOIUrl":null,"url":null,"abstract":"This study proposes a different approach of much simpler THz emitters based on radiative impurity transitions in doped silicon devices fabricated without Ge alloying. This work has gathered the electroluminescence at 4.2 K from a boron doped sample. The current versus voltage characteristics are measured at the same pulse conditions using an inductive probe and oscilloscope.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"87 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Terahertz emitting devices based on dopant transitions in silicon\",\"authors\":\"J. Kolodzey, P. Lv, R. Troeger, S. Kim\",\"doi\":\"10.1109/GROUP4.2004.1416645\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study proposes a different approach of much simpler THz emitters based on radiative impurity transitions in doped silicon devices fabricated without Ge alloying. This work has gathered the electroluminescence at 4.2 K from a boron doped sample. The current versus voltage characteristics are measured at the same pulse conditions using an inductive probe and oscilloscope.\",\"PeriodicalId\":299690,\"journal\":{\"name\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"volume\":\"87 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2004.1416645\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"First IEEE International Conference on Group IV Photonics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2004.1416645","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本研究提出了一种基于不含锗合金的掺杂硅器件的辐射杂质跃迁的更简单的太赫兹发射器的不同方法。本工作收集了掺硼样品在4.2 K时的电致发光。在相同的脉冲条件下，使用电感探头和示波器测量电流与电压的特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Terahertz emitting devices based on dopant transitions in silicon

This study proposes a different approach of much simpler THz emitters based on radiative impurity transitions in doped silicon devices fabricated without Ge alloying. This work has gathered the electroluminescence at 4.2 K from a boron doped sample. The current versus voltage characteristics are measured at the same pulse conditions using an inductive probe and oscilloscope.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

First IEEE International Conference on Group IV Photonics, 2004.

自引率

0.00%

发文量