Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors using annealing technique

A method to enhance the breakdown voltage performance of AlGaN/GaN HEMTs using post-annealing technique is reported in this paper. The transistors were annealed at 900 /spl deg/C for 30 seconds in a rapid thermal annealing system. After metallization, devices were annealed at 700 /spl deg/C in a furnace to improve breakdown voltages. The typical drain current-voltage characteristics of HEMTdevice with 0.3 /spl mu/m gate length and 100 /spl mu/m gate width is studied by experimental results.