表面活化键合的GCIB辐照条件优化

S. Ikeda, T. Sasaki, N. Toyoda
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引用次数: 0

摘要

采用气簇离子束(GCIB)进行表面活化键合(SAB)。由于GCIB只在近表面进行修饰,因此期望进行低损伤的表面修饰和活化。本研究选择GCIB辐照下的Cu-Cu键合作为初步研究。XPS和接触角测试表明,在5 ~ 20 kV的斜入射Ar-GCIB下,Cu表面的氧化物被有效去除。同时,GCIB在正入射和斜入射下的连续照射也使Cu表面光滑。然后通过拉伸试验研究了Cu-Cu结合强度。
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Optimization of GCIB irradiation conditions for surface activated bonding
Gas cluster ion beam (GCIB) was used for surface activation bonding (SAB). Since GCIB modifies only near surface, low-damage surface modification and activation are expected. In this study, Cu-Cu bonding with GCIB irradiation was selected as a preliminary study. XPS and contact angle measurement showed that surface oxide on Cu was removed efficiently by oblique incidence Ar-GCIB at 5–20 kV. Also, sequential irradiation of GCIB at normal and oblique incidence realized smooth Cu surface. After that Cu-Cu bonding strength was investigated by the tensile test.
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